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TYPICAL PERFORMANCE CURVES (R)
APT50GT120JRDQ2 1200V
APT50GT120JRDQ2
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * Intergrated Gate Resistor: Low EMI, High Reliability * High Freq. Switching to 50KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT50GT120JRDQ2 UNIT Volts
1200 30 72 32 150 150A @ 1200V 379 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA) Gate Threshold Voltage (VCE = VGE, I C = 2mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.7
2 2
5.5 3.2 4.0
6.5 3.7 400 TBD 300
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RG(int)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
A nA
9-2005 052-6278 Rev A
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GT120JRDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 50A TJ = 150C, R G = 1.0
7,
MIN
TYP
MAX
UNIT pF V nC
2500 250 155 7.5 240 20 110
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H, VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 50A
150 23 50 215 26 3585 4835 1910 23 50 255 50 3580 6970 2750
A
ns
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 50A
ns
Turn-on Switching Energy (Diode)
6
TJ = +125C
RG = 1.0 7
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.33 1.1 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
9-2005 Rev A
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6278
TYPICAL PERFORMANCE CURVES
120 100 80
V
GE
= 15V
150 125 100 75 50 25 0
APT50GT120JRDQ2
15V 13V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25C
60
12V
TJ = 125C
40 20 0
11V 10V 9V 8V
140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 50A C T = 25C
J
7V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
80 60 40 20 0 0
VCE = 960V
TJ = -55C
TJ = 25C TJ = 125C
8 6 4 2 0 0 50 100 150 200 250 GATE CHARGE (nC) 300 350
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics IC = 100A
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 7 6 5 4 3 2 1 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100 IC, DC COLLECTOR CURRENT(A) 90 80 70 60 50 40 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 9-2005 052-6278 Rev A 0 25
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 100A IC = 50A
IC = 50A
IC = 25A
IC = 25A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
8
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80
0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
35 30 25 20 15 10 5 TJ = 25C, or 125C
VCE = 800V RG = 1 L = 100H
300 td (OFF), TURN-OFF DELAY TIME (ns) 250 200 150 100 50 VCE = 800V RG = 1
VGE =15V,TJ=125C
APT50GT120JRDQ2
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
VGE =15V,TJ=25C
30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
160 140 120 100 80 60 40 20 0
TJ = 25 or 125C,VGE = 15V RG = 1, L = 100H, VCE = 800V
0
10
30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
60 50 tf, FALL TIME (ns) 40 30 20 10 0
TJ = 25C, VGE = 15V
0
L = 100H
10
RG = 1, L = 100H, VCE = 800V
tr, RISE TIME (ns)
TJ = 125C, VGE = 15V
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
25,000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1
G
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
6000 5000 4000 3000 2000
TJ = 25C
V = 800V CE V = +15V GE R = 1
G
20,000
TJ = 125C
TJ = 125C
15,000
10,000
5,000
TJ = 25C
1000 0
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
60,000 SWITCHING ENERGY LOSSES (J) 50,000 40,000 30,000 20,000 10,000 0
Eon2,50A Eoff,50A Eon2,25A Eoff,100A Eoff,25A
V = 800V CE V = +15V GE T = 125C
J
0
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
25,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 1
G
Eon2,100A
Eon2,100A
20,000
15,000
10,000
Eon2,50A Eoff,50A Eon2,25A Eoff,25A
9-2005
5,000
Eoff,100A
Rev A
052-6278
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
4,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT50GT120JRDQ2
C, CAPACITANCE ( F)
P
1,000
500
Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
00 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0.35 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
70 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
0.0836
0.0144
10 5
T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0
G
F
Power (watts)
0.174
0.252
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0732 Case temperature. (C)
2.87
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10 20
052-6278
Rev A
9-2005
APT50GT120JRDQ2
APT30DQ120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr 90%
Collector Current
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6278
Rev A
9-2005
TYPICAL PERFORMANCE CURVES
APT50GT120JRDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 89C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 50A Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT50GT120JRDQ2 UNIT Amps
30 39 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.98 3.67 2.36
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) 1.00 0.80 0.60 0.40 0.20 0 D = 0.9
25 300 360 4 380 1700 8 160 2550 28 -
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.7
0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.219 0.00306
0.468
0.0463
Case temperature (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6278
0.341
0.267
Rev A
Power (watts)
9-2005
100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = -55C TJ = 175C TJ = 25C
450 400 350 300 250 200 150 100 50 30A 60A
APT50GT120JRDQ2
T = 125C J V = 800V
R
15A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10
T = 125C J V = 800V
R
0
4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0
60A
60A
30A
30A
15A
15A
5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5
Duty cycle = 0.5 T = 175C
J
IRRM
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
9-2005
50
Rev A
052-6278
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10078BLL
APT50GT120JRDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
9-2005 052-6278 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
Dimensions in Millimeters and (Inches)
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6

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